3EC2 - ELECTRONIC DEVICES & CIRCUITS

UNIT 1 : SEMICONDUCTOR PHYSICS :

Mobility and conductivity, charge densities in a semiconductor,

Fermi Dirac distribution, carrier concentrations and fermi levels in semiconductor, Generation and

recombination of charges, diffusion and continuity equation, Mass action Law, Hall effect.

UNIT 2 :

Junction diodes, Diode as a ckt. element, load line concept, clipping and clamping  circuits,

Voltage multipliers. Construction, characteristics and working principles of UJT

UNIT 3

: Transistor  characteristics,  Current  components, Current  gains: alpha and beta. Operating

point. Hybrid model, h-parameter equivalent circuits. CE, CB and CC configuration. DC and AC analysis

of CE,CC  and  CB  amplifiers. Ebers-Moll  model. Biasing & stabilization techniques. Thermal runaway,

Thermal stability.

UNIT 4

: JFET, MOSFET, Equivalent circuits and biasing of JFET's & MOSFET’s. Low frequency CS and

CD JFET amplifiers. FET as a voltage variable resistor.

UNIT 5 : SMALL  SIGNAL  AMPLIFIERS  AT  LOW FREQUENCY :

Analysis of BJT and FET, DC and

RC coupled amplifiers. Frequency response, midband gain, gains at low and high frequency. Analysis of

DC and differential  amplifiers,  Miller's  Theorem.  Cascading  Transistor amplifiers, Darlington pair.

Emitter follower, source follower.