7EC4 IC TECHNOLOGY

UNIT 1 : INTRODUCTION TO TECHNOLOGIES-

Semiconductor Substrate-Crystal defects, Electronic

Grade Silicon, Czochralski Growth, Float Zone Growth, Characterization & evaluation of Crystals; Wafer

Preparation- Silicon Shaping, Etching and Polishing, Chemical cleaning.

UNIT 2 : DIFFUSION & ION IMPLANTATION-

Ficks diffusion Equation in One Dimension, Atomic

model, Analytic Solution of Ficks Law, correction to simple theory , Diffusion in SiO

. Ion Implantation and

2

Ion Implantation Systems Oxidation. Growth mechanism and Deal-Grove Model of oxidation, Linear and

Parabolic Rate co-efficient, Structure of SiO

, Oxidation techniques and system, Oxide properties.

2

UNIT 3 : CHEMICAL VAPOUR DEPOSITION AND LAYER GROWTH-

CVD for deposition of dielectric

and polysilicon – a simple CVD system, Chemical equilibrium and the law of mass action, Introduction to

atmospheric CVD of dielectric, low pressure CVD of dielectric and semiconductor. Epitaxy-Vapour Phase

Expitaxy, Defects in Epitaxial growth, Metal Organic Chemical Vapor Deposition, Molecular beam epitaxy.

UNIT 4 : PATTERN TRANSFER-

Introduction to photo/optical lithography, Contact/ proximity printers,

Projection printers, Mask generation, photoresists. Wet etching, Plasma etching, Reaction ion etching.

UNIT 5 : VLSI PROCESS INTEGRATION-

Junction and Oxide Isolation, LOCOS methods, Trench

Isolation, SOI; Metallization, Planarization. Fundamental consideration for IC Processing, NMOS IC

Technology,  CMOS IC Technology, Bipolar IC Technology.