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5EE7 POWER ELECTRONICS LAB-III |
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1 Study the comparison of following power electronics devices regarding ratings, performance |
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characteristics and applications: Power Diode, Power Transistor, Thyristor, Diac, Triac, GTO, |
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MOSFET, MCT and SIT. |
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2 Determine V-I characteristics of SCR and measure forward breakdown voltage, latching and |
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holding currents. |
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3 Find V-I characteristics of TRIAC and DIAC. |
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4 Find output characteristics of MOSFET and IGBT. |
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5 Find transfer characteristics of MOSFET and IGBT. |
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6 Find UJT static emitter characteristics and study the variation in peak point and valley point. |
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7 Study and test firing circuits for SCR-R, RC and UJT firing circuits. |
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8 Study and test 3-phase diode bridge rectifier with R and RL loads. Study the effect of filters. |
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9 Study and obtain waveforms of single-phase half wave controlled rectifier with and without |
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filters. Study the variation of output voltage with respect to firing angle. |
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10 Study and obtain waveforms of single-phase half controlled bridge rectifier with R and RL |
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loads. Study and show the effect of freewheeling diode. |
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11 Study and obtain waveforms of single-phase full controlled bridge converter with R and RL |
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loads. Study and show rectification and inversion operations with and without freewheeling |
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diode. |
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12 Control the speed of a dc motor using single-phase half controlled bridge rectifier and full |
controlled bridge rectifier. Plot armature voltage versus speed characteristics